KeyTechnologies
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· GoldReflectivity
Gold reflectivity reaches 97.5%. By using multilayer gold plating technology, a layered metal film structure is formed on the substrate surface, enhancing both reflectivity and durability. The multilayer approach also allows adjustment of metal types and thicknesses to achieve optimal performance based on specific requirements.
· GoldReflectivity
Gold reflectivity reaches 97.5%. By using multilayer gold plating technology, a layered metal film structure is formed on the substrate surface, enhancing both reflectivity and durability. The multilayer approach also allows adjustment of metal types and thicknesses to achieve optimal performance based on specific requirements.
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· PlatingEquipmentSelection
Electroplating equipment can be categorized into horizontal jet plating (cup plating) and vertical rack plating. Choosing the appropriate equipment helps achieve a more uniform coating.
· PlatingEquipmentSelection
Electroplating equipment can be categorized into horizontal jet plating (cup plating) and vertical rack plating. Choosing the appropriate equipment helps achieve a more uniform coating.
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· ProcessParameterControl
The control of electroplating process parameters has a significant impact on coating performance. By precisely managing these parameters, high-quality coatings with superior properties can be achieved.
· ProcessParameterControl
The control of electroplating process parameters has a significant impact on coating performance. By precisely managing these parameters, high-quality coatings with superior properties can be achieved.
ApplicationFields
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· SemiconductorEpitaxy
On specific substrates, one or more layers of semiconductor materials with defined crystal structures and electrical properties are grown. These devices achieve high-quality epitaxial growth by precisely controlling conditions such as temperature, pressure, and gas flow.
· SemiconductorEpitaxy
On specific substrates, one or more layers of semiconductor materials with defined crystal structures and electrical properties are grown. These devices achieve high-quality epitaxial growth by precisely controlling conditions such as temperature, pressure, and gas flow.
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· SemiconductorAnnealingEquipment
By controlling temperature and duration, crystal defects are eliminated to enhance the electrical performance and stability of the wafer.
· SemiconductorAnnealingEquipment
By controlling temperature and duration, crystal defects are eliminated to enhance the electrical performance and stability of the wafer.
PlatingProcess